Parameter Extraction Scheme For Silicon Pressure Sensors In Standard CMOS Technology
Price
Free (open access)
Transaction
Volume
34
Pages
9
Published
1997
Size
651 kb
Paper DOI
10.2495/MIC970221
Copyright
WIT Press
Author(s)
S.A. Bota, E. Montane, M. Carmona, S. Marco & J. Samitier
Abstract
Forming a part of the CAD/CAE attempts to simulate and design microsystems, the process of parameter extraction for a pressure sensor macromodel from layout is presented. The pressure sensor was integrated on a silicon chip by means of a standard CMOS technology (1.0 urn from Atmel-European Silicon Structures) followed by micromechanical structuring of the device. A tool for analysing the physical layout of the sensor is also described. From the results, an electrical model of the sensor was obtained for use in conventional CAD tools. 1 Introduction Microsystems can combine analog and digital circuits, along with mechanical elements, in a single package. The mo
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