WIT Press


Parameter Extraction Scheme For Silicon Pressure Sensors In Standard CMOS Technology

Price

Free (open access)

Volume

34

Pages

9

Published

1997

Size

651 kb

Paper DOI

10.2495/MIC970221

Copyright

WIT Press

Author(s)

S.A. Bota, E. Montane, M. Carmona, S. Marco & J. Samitier

Abstract

Forming a part of the CAD/CAE attempts to simulate and design microsystems, the process of parameter extraction for a pressure sensor macromodel from layout is presented. The pressure sensor was integrated on a silicon chip by means of a standard CMOS technology (1.0 urn from Atmel-European Silicon Structures) followed by micromechanical structuring of the device. A tool for analysing the physical layout of the sensor is also described. From the results, an electrical model of the sensor was obtained for use in conventional CAD tools. 1 Introduction Microsystems can combine analog and digital circuits, along with mechanical elements, in a single package. The mo

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