Author(s)

T. Miyoshi, H. Tsuchiya & M. Ogawa

Abstract

Invited Paper Comparative study on electron transport modeling of quantum devices T. Miyoshi, H. Tsuchiya, M. Ogawa Department of Electrical and Electronics Engineering, Kobe University, Rokko, Nada, Kobe 657, Japan ABSTRACT Semiconductor quantum devices, which rely on tunneling and interference effects for their operation, are simulated using approaches based on the transmission coefficient(TC) or the Wigner function(WF) approach. The two methods are compared for the resonant - tunneling diodes and the electron waveguides, by comparing current as a function of the wide range of applied voltage. It is shown that the TC method is applicable only to the system with a small potential perturbation, while the WF model can give all of the quantum mechanical information for any potential profile. INTRODUCTION Recent advances in crystal growth and microfabrication technologies have allowed us to explore a new field of semiconductor device research. Instead of conven

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