Author(s)

T. Rang & R. Kurel

Abstract

By the manufacturing of large area contacts to semiconductor substrates, using standard technologies, the interface area will have a number of inhomogeneities (e.g. grain size effects, diffusional creeps, other boundary effects, etc.). These inhomogeneities lead to the local characteristics at the interface. Therefore, the height of the MS contact barrier will be a combination of several local barrier heights. Our previous simulations [1] have been shown of existing of strong current suppressing effect at the places, where the changes of barrier height take place for the large area contacts. This "extra current" forms the region of relative high current density near the boundary with lower barrier height. Unfortunately, these high current densities appear over

Keywords